R&d Intership in Power Semiconductor Devices 80

Vor 4 Tagen

Lenzburg, Schweiz Hitachi Vollzeit

**Location**:
Lenzburg, Aargau, Switzerland

**Job ID**:
R0057102

**Date Posted**:
2025-02-10

**Company Name**:
HITACHI ENERGY LTD

**Profession (Job Category)**:
Administration & Facilities

**Job Schedule**:
Full time

**Remote**:
No

**The opportunity**

In this assignment, your primary goal includes design and investigation of next generation Si power semiconductor device concepts via TCAD simulations for improved electrical performance and enhanced safe-operating area (SOA) robustness pushing device capability towards high-voltage and high temperature operations.

**How you’ll make an impact**
- Literature review for recent trends in power devices, proposal of innovative device concept, device design, calibrated process and device simulations
- Benchmarking with existing baseline technology, presenting and reporting the results to the team members
- Perform design and simulation activities via Synopsys TCAD Sentaurus simulation toolsuite
- Conduct root cause study, establish good understanding and electrical models of device failure modes during SOA conditions in TCAD tools with inputs from experimental trials
- Propose novel ideas to enhance the capability without sacrificing the other performance parameters like on-state and switching losses
- Experimental realization (such as DOE, concept mask-layout) and analysis of electrical characterization data in collaboration with other teams like fabrication and testing team members is part of the assignment

**Your background**
- Currently pursuing a Master’s or PhD degree in electrical engineering, physics, material science or similar discipline ideally specializing in semiconductor technology
- Knowledge of basic device physics (p-n junctions, energy band diagrams, depletion region, charge carrier dynamics), semiconductor material (Si, SiC, GaN etc), fabrication processes and understanding of working principle of basic semiconductor devices such as p-n diodes, MOSFETs, BJTs. Prior-experience on power semiconductor devices such as Si-IGBTs, power MOSFETs would be a plus
- Prior hands-on experience or familarity with device/process simulations TCAD tools such as Synopsys is a strong plus
- Exposure to basic electrical characterizations tools and techniques such as I-V, C-V would be a plus
- Well-versed in programming/scripting languages such as python
- Know-how in data analysis tools and statistics is advantageous
- Excellent communication skills, both written and verbal, to effectively document the design and present results to the team
- Fluent in English, German is a plus

**More about us**

You interact and collaborate with a dynamic and multidisciplinary team that will supervise and guide the project. If you have a strong technical background, motivation to develop innovative solutions, and you are goal-oriented, this is your opportunity to contribute in building a stronger and more sustainable energy future.

Availability 5 - 10 months, location mainly in office in Lenzburg (The primary intended duration of the internship is six months.)

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