R&d Internship in Sic Power Devices 80

Vor 3 Tagen


Lenzburg, Schweiz HITACHI ENERGY LTD Vollzeit

**Description**

**The opportunity**

Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.

**How you’ll make an impact**
- Assist in the conceptual design and TCAD simulation of SiC power devices
- Work with our experienced engineers to refine device structures and optimize performance
- Predict electrical characteristics and validate simulation results
- Analyze data, document findings, and present insights in team meetings
- Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements

**Your background**
- Master’s degree in Electrical Engineering, Physics, or Materials Science
- Experience with TCAD tools, ideally in SiC device simulation
- Understanding of SiC device physics
- Basic knowledge of semiconductor fabrication processes
- Strong analytical and data interpretation skills
- Fluent in English with excellent communication skills

**More about us**

We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally - empowering you to thrive while balancing life and work.



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